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IPL60R650P6SATMA1 Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 600V 8THINPAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™ P6
Part Status Active
Number of Terminations 5
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 56.8W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 557pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 6.7A
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 600V
Lead Free Contains Lead
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerTDFN
Weight 75.891673mg
Operating Temperature -40°C~150°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-N5
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 650m Ω @ 2.4A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 6.7A Tc
Rise Time 7ns
Vgs (Max) ±20V
Turn-Off Delay Time 33 ns
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.65Ohm
RoHS Status ROHS3 Compliant
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