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IPI80N06S2L05AKSA2 Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 55V 80A TO262-3

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 300W Tc
Turn On Delay Time 19 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 80A Tc
Rise Time 93ns
Vgs (Max) ±20V
Turn-Off Delay Time 67 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.006Ohm
Radiation Hardening No
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Part Status Obsolete
Number of Terminations 3
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.8m Ω @ 80A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 90 ns
Continuous Drain Current (ID) 80A
Max Dual Supply Voltage 55V
Avalanche Energy Rating (Eas) 800 mJ
RoHS Status ROHS3 Compliant
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O vaega nei e aofia ai  'IPI80' 

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