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IPI100N10S305AKSA1 Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 300W Tc
Power Dissipation 300W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 240μA
Input Capacitance (Ciss) (Max) @ Vds 11570pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 176nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 100A
Max Dual Supply Voltage 100V
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
JESD-30 Code R-PSIP-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 34 ns
Rds On (Max) @ Id, Vgs 5.1m Ω @ 100A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 100A Tc
Rise Time 17ns
Vgs (Max) ±20V
Turn-Off Delay Time 60 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 400A
Lead Free Contains Lead
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