IPD70N04S3-07 Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 40V 82A TO252-3

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 79W
Turn On Delay Time 13 ns
Rds On (Max) @ Id, Vgs 6m Ω @ 70A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 82A Tc
Rise Time 8ns
Vgs (Max) ±20V
Turn-Off Delay Time 17 ns
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 70A
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 145 mJ
Length 6.5mm
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2007
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Power Dissipation-Max 79W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 82A
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.006Ohm
Pulsed Drain Current-Max (IDM) 280A
Height 2.3mm
Width 6.22mm
Lead Free Lead Free
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