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IPD60R1K4C6ATMA1 Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) TO-252

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4 Ω @ 1.1A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 3.2A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 3.2A
Pulsed Drain Current-Max (IDM) 8A
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™ C6
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Number of Elements 1
Power Dissipation-Max 28.4W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 10V
Vgs (Max) ±20V
Max Dual Supply Voltage 600V
Avalanche Energy Rating (Eas) 26 mJ
Lead Free Contains Lead
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