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IPD50R399CP Fa'amatalaga Fa'atekinolosi

IPD50R399CP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

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Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2007
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 83W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 330μA
Current - Continuous Drain (Id) @ 25°C 9A Tc
Drain to Source Voltage (Vdss) 550V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 9A
Pulsed Drain Current-Max (IDM) 20A
Avalanche Energy Rating (Eas) 215 mJ
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish TIN
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code compliant
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 399m Ω @ 4.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.399Ohm
DS Breakdown Voltage-Min 500V
RoHS Status RoHS Compliant
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