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IPD50N03S2L06ATMA1 Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 136W Tc
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.4m Ω @ 50A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 50A Tc
Rise Time 30ns
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0092Ohm
Avalanche Energy Rating (Eas) 250 mJ
Lead Free Contains Lead
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 85μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 50A
Max Dual Supply Voltage 30V
Pulsed Drain Current-Max (IDM) 200A
RoHS Status ROHS3 Compliant
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