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IPD35N12S3L24ATMA1 Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 120V 35A TO252-3

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 2.4V @ 39μA
Current - Continuous Drain (Id) @ 25°C 35A Tc
Drain to Source Voltage (Vdss) 120V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.032Ohm
DS Breakdown Voltage-Min 120V
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2017
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 71W Tc
Case Connection DRAIN
Rds On (Max) @ Id, Vgs 24m Ω @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain Current-Max (Abs) (ID) 35A
Pulsed Drain Current-Max (IDM) 140A
Avalanche Energy Rating (Eas) 175 mJ
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