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IPD048N06L3GBTMA1 Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-252 T/R

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.8m Ω @ 90A, 10V
Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.0048Ohm
DS Breakdown Voltage-Min 60V
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 115W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 58μA
Current - Continuous Drain (Id) @ 25°C 90A Tc
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 90A
Pulsed Drain Current-Max (IDM) 360A
Avalanche Energy Rating (Eas) 68 mJ
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