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IPB120N04S401ATMA1 Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 40V 120A TO263-3-2

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2010
Part Status Active
Max Operating Temperature 175°C
Technology MOSFET (Metal Oxide)
Turn On Delay Time 34 ns
Rds On (Max) @ Id, Vgs 1.5mOhm @ 100A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 120A Tc
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 36 ns
Continuous Drain Current (ID) 120A
Max Dual Supply Voltage 40V
Drain to Source Resistance 1.35mOhm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263AB)
Packaging Tape & Reel (TR)
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Power Dissipation-Max 188W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 140μA
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 176nC @ 10V
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Turn-Off Delay Time 41 ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 14nF
Rds On Max 1.5 mΩ
Lead Free Contains Lead
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