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IPB065N10N3GATMA1 Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 100V 80A 3-Pin TO-263 T/R

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 19 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 4910pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Vgs (Max) ±20V
Turn-Off Delay Time 37 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0065Ohm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 150W Tc
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5m Ω @ 80A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 80A Tc
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 9 ns
Continuous Drain Current (ID) 80A
Max Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 160 mJ
Lead Free Contains Lead
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