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IPB050N06NGATMA1 Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) TO-263

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~175°C TJ
Published 2007
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 270μA
Current - Continuous Drain (Id) @ 25°C 100A Tc
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 400A
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 300W Tc
Power Dissipation 300W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.7m Ω @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 167nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 100A
Drain-source On Resistance-Max 0.0047Ohm
DS Breakdown Voltage-Min 60V
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