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IPB019N08N3GATMA1 Fa'amatalaga Fa'atekinolosi

IPB019N08N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 7
Operating Temperature -55°C~175°C TJ
Published 2008
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 7
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Power Dissipation 300W
Turn On Delay Time 28 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 33 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Height 4.5mm
Lead Free Contains Lead
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 6
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G6
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.9m Ω @ 100A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 180A Tc
Rise Time 73ns
Vgs (Max) ±20V
Turn-Off Delay Time 86 ns
Threshold Voltage 2.8V
Max Dual Supply Voltage 80V
Max Junction Temperature (Tj) 175°C
RoHS Status ROHS3 Compliant
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