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IPA65R125C7XKSA1 Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 650V TO220-3

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 440μA
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.125Ohm
Avalanche Energy Rating (Eas) 89 mJ
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™ C7
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 32W Tc
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 125m Ω @ 8.9A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 10A Tc
Rise Time 15ns
Vgs (Max) ±20V
Turn-Off Delay Time 71 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 650V
Pulsed Drain Current-Max (IDM) 75A
RoHS Status ROHS3 Compliant
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