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IPA60R280P7SXKSA1 Fa'amatalaga Fa'atekinolosi

Single N-Channel 600 V 280 mOhm 18 nC CoolMOS? Power Mosfet - TO-220-3FP

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 280m Ω @ 3.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 761pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
JEDEC-95 Code TO-220AB
Pulsed Drain Current-Max (IDM) 36A
Avalanche Energy Rating (Eas) 38 mJ
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -40°C~150°C TJ
Series CoolMOS™ P7
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 24W Tc
Case Connection ISOLATED
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 190μA
Current - Continuous Drain (Id) @ 25°C 12A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.28Ohm
DS Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
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