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DDB6U75N16W1RBOMA1 Fa'amatalaga Fa'atekinolosi

IGBT MOD 1200V 69A 335W

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / IGBTs Modules
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mount PCB, Through Hole
Package / Case Module
Transistor Element Material SILICON
Published 2006
Part Status Active
Number of Terminations 27
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 27
Qualification Status Not Qualified
Configuration Three Phase Inverter
Case Connection ISOLATED
Forward Current 65A
Halogen Free Not Halogen Free
Input Standard
Max Collector Current 69A
Max Repetitive Reverse Voltage (Vrrm) 1.6kV
Turn On Time 137 ns
Turn Off Time-Nom (toff) 630 ns
Input Capacitance (Cies) @ Vce 2.8nF @ 25V
Length 48mm
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Chassis Mount
Number of Pins 10
Operating Temperature -40°C~150°C
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form UNSPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X27
Number of Elements 1
Element Configuration Single
Power - Max 335W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Peak Reverse Current 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 50A
NTC Thermistor Yes
Height 12mm
Width 33.8mm
Lead Free Contains Lead
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