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BSP135H6327XTSA1 Fa'amatalaga Fa'atekinolosi

BSP135H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series SIPMOS®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Current 12A
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 1V @ 94μA
Input Capacitance (Ciss) (Max) @ Vds 146pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Fall Time (Typ) 182 ns
Continuous Drain Current (ID) 120mA
Max Dual Supply Voltage 600V
Recovery Time 130 ns
Height 1.5mm
Width 3.5mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2012
JESD-609 Code e3
Part Status Active
Number of Terminations 4
Subcategory FET General Purpose Power
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Pin Count 4
Voltage 600V
Element Configuration Single
Power Dissipation 1.8W
Turn On Delay Time 5.4 ns
Rds On (Max) @ Id, Vgs 45 Ω @ 120mA, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 120mA Ta
Rise Time 5.6ns
Vgs (Max) ±20V
Turn-Off Delay Time 28 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
FET Feature Depletion Mode
Length 6.5mm
Radiation Hardening No
Lead Free Lead Free
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