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BSC130P03LSGAUMA1 Fa'amatalaga Fa'atekinolosi

Trans MOSFET P-CH 30V 12A Automotive 8-Pin TDSON EP

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2011
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 5
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 69W Tc
Power Dissipation 2.5W
Turn On Delay Time 11.4 ns
Rds On (Max) @ Id, Vgs 13m Ω @ 22.5A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 12A Ta 22.5A Tc
Rise Time 65.6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 35.1 ns
Continuous Drain Current (ID) 12A
Max Dual Supply Voltage -30V
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerVDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Vgs(th) (Max) @ Id 2.2V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 3670pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 73.1nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±25V
Turn-Off Delay Time 43.5 ns
Gate to Source Voltage (Vgs) 25V
Pulsed Drain Current-Max (IDM) 90A
Lead Free Contains Lead
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