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BSC0924NDIATMA1 Fa'amatalaga Fa'atekinolosi

MOSFET N-Ch 30V,30V 40A,40A TISON-8

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form NO LEAD
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-N6
Configuration SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection DRAIN SOURCE
Rds On (Max) @ Id, Vgs 5m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Continuous Drain Current (ID) 32A
Drain Current-Max (Abs) (ID) 1.3A
DS Breakdown Voltage-Min 30V
FET Feature Logic Level Gate, 4.5V Drive
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual) Asymmetrical
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 17A 32A
Drain to Source Voltage (Vdss) 30V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.007Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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