BSC017N04NSGATMA1 Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 40V 30A 8-Pin TDSON

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Pin Count 8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 108nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 100A
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 295 mJ
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2009
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 5
Terminal Finish Tin (Sn)
Terminal Position DUAL
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 139W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 85μA
Current - Continuous Drain (Id) @ 25°C 30A Ta 100A Tc
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.0017Ohm
DS Breakdown Voltage-Min 40V
RoHS Status ROHS3 Compliant
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