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BFR106E6327HTSA1 Fa'amatalaga Fa'atekinolosi

TRANSISTOR RF NPN 15V SOT-23

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / RF BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 99 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 700mW
Terminal Form GULL WING
Current Rating 210mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 16V
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 70mA 8V
Gain 8.5dB ~ 13dB
Max Breakdown Voltage 12V
Emitter Base Voltage (VEBO) 3V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Width 1.3mm
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 15V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 5GHz
Base Part Number BFR106
Number of Elements 1
Power Dissipation 700mW
Halogen Free Not Halogen Free
Transistor Type NPN
Max Collector Current 210mA
Collector Emitter Breakdown Voltage 15V
Transition Frequency 5000MHz
Collector Base Voltage (VCBO) 20V
hFE Min 70
Noise Figure (dB Typ @ f) 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Length 2.9mm
RoHS Status ROHS3 Compliant
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