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AUIRGP35B60PD-E Fa'amatalaga Fa'atekinolosi

IGBT 600V 60A 308W TO247AD

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2011
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 2.55V
Reverse Recovery Time 42 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 34 ns
Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 35A
IGBT Type NPT
Current - Collector Pulsed (Icm) 120A
Switching Energy 220μJ (on), 215μJ (off)
Gate-Emitter Thr Voltage-Max 5V
Height 20.7mm
Width 5.31mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 3
Additional Feature HIGH RELIABILITY
Max Power Dissipation 308W
Rise Time-Max 11ns
Power Dissipation 308W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 60A
JEDEC-95 Code TO-247AD
Collector Emitter Saturation Voltage 2.15V
Test Condition 390V, 22A, 3.3 Ω, 15V
Turn Off Time-Nom (toff) 142 ns
Gate Charge 55nC
Td (on/off) @ 25°C 26ns/110ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 16ns
Length 15.87mm
Radiation Hardening No
RoHS Status RoHS Compliant
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