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AUIRF9952Q Fa'amatalaga Fa'atekinolosi

MOSFET N/P-CH 30V 3.5A/2.3A 8SO

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2011
Part Status Obsolete
Number of Terminations 8
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID) 2.8A
Pulsed Drain Current-Max (IDM) 16A
Avalanche Energy Rating (Eas) 44 mJ
FET Feature Logic Level Gate
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Terminal Form GULL WING
Reach Compliance Code compliant
JESD-30 Code R-PDSO-G8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.5A 2.3A
Drain to Source Voltage (Vdss) 30V
JEDEC-95 Code MS-012AA
Drain-source On Resistance-Max 0.1Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
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