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AUIRF7103QTR Fa'amatalaga Fa'atekinolosi

MOSFET 2N-CH 50V 3A 8SOIC

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 2009
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Max Power Dissipation 2.4W
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5.1 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 50V
Turn-Off Delay Time 15 ns
Threshold Voltage 1V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 50V
FET Feature Standard
Length 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, HEXFET®
Part Status Not For New Designs
Number of Terminations 8
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Terminal Form GULL WING
Element Configuration Dual
Power Dissipation 2.4W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 130m Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 255pF @ 25V
Rise Time 1.7ns
Fall Time (Typ) 2.3 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.13Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 1.5mm
Width 4mm
REACH SVHC No SVHC
Lead Free Lead Free
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O isi e aofia ai   "AUIRF"   vaega

O vaega nei e aofia ai  'AUIRF' 

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AUIRF1010ZL IR Specialized Hot ICs 9480
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