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AUIRF1405ZSTRL Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 55V 150A D2PAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2013
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 230W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.9m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4780pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 82 ns
Continuous Drain Current (ID) 150A
Drain-source On Resistance-Max 0.0049Ohm
Pulsed Drain Current-Max (IDM) 600A
Height 4.826mm
Width 9.65mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 230W
Turn On Delay Time 18 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 150A Tc
Rise Time 110ns
Vgs (Max) ±20V
Turn-Off Delay Time 48 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 270 mJ
Length 10.668mm
Radiation Hardening No
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