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2N7002H6327XTSA2 Fa'amatalaga Fa'atekinolosi

2N7002H6327XTSA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2012
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 60V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Channels 1
Element Configuration Single
Power Dissipation 200mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3 Ω @ 500mA, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Rise Time 3.3ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 300mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 3Ohm
Max Junction Temperature (Tj) 150°C
Length 2.9mm
RoHS Status ROHS3 Compliant
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 115mA
Pin Count 3
Number of Elements 1
Power Dissipation-Max 500mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 3 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 20pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 5.5 ns
Threshold Voltage 2.1V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Height 1.1mm
Width 1.3mm
Lead Free Lead Free
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