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SIRA01DP-T1-GE3 Fa'amatalaga Fa'atekinolosi

MOSFET P-CH 30V POWERPAK SO-8

Uiga Oloa Uiga Taua
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.2V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET® Gen IV
Power Dissipation (Max) 5W (Ta), 62.5W (Tc)
Package / Case PowerPAK® SO-8
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 26A (Ta), 60A (Tc)
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) +16V, -20V
Supplier Device Package PowerPAK® SO-8
Rds On (Max) @ Id, Vgs 4.9 mOhm @ 15A, 10V
Packaging Tape & Reel (TR)
Other Names SIRA01DP-T1-GE3TR
Mounting Type Surface Mount
Manufacturer Standard Lead Time 32 Weeks
Input Capacitance (Ciss) (Max) @ Vds 3490pF @ 15V
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description P-Channel 30V 26A (Ta), 60A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
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O isi e aofia ai   "SIRA0"   vaega

O vaega nei e aofia ai  'SIRA0' 

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SIRA01DP-T1-GE3 tagata gaosi oloa: Electro-Films (EFI) / Vishay, Bonchip fa'asoa, SIRA01DP-T1-GE3 tau faasinomaga. SIRA01DP-T1-GE3 tapula'a, SIRA01DP-T1-GE3 Pepa fa'amaumauga PDF ma pine fa'amatalaga fa'amatalaga download.E mafai ona e fa'aogaina le SIRA01DP-T1-GE3 Pluggable Connectors, DSP Datesseet PDF, su'e SIRA01DP-T1-GE3 pine faʻataʻitaʻiga ma faʻataʻamilosaga faʻataʻitaʻiga ma le faʻaaogaina o le faʻaogaina o le gaioiga, SIRA01DP-T1-GE3 aoaoga faaeletonika.E mafai ona e sii maia mai le Bonchip.
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